High frequency, high power conversion through PWM switching using the third generation IGBTS

High frequency, high power conversion through PWM switching using the third generation IGBTS

Insulated gate bipolar transistor (IGBT) continues to find wide use in inverter applications due to the combined benefits of both bipolar junction transistor and metal-oxide-semiconductor field-effect transistor. This device is now playing an important role whether in machinery or factory automat...

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Bibliographic Details
Main Author: Ali Iftekhar Maswood
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Online Access:http://hdl.handle.net/10356/14511
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Institution: Nanyang Technological University
Language: English

Internet

http://hdl.handle.net/10356/14511

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