High frequency, higher power conversion through PWM switching using the third generation IGBTs
The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power conversion process is now predominant. It combines the benefits that are obtainable from both the bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET). The...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Published: |
2008
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/4938 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |