High frequency, higher power conversion through PWM switching using the third generation IGBTs

• المؤلف الرئيسي: Neo, Tiong Guan.
• مؤلفون آخرون: Ali Iftekhar Maswood
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/4938
• المؤسسة: Nanyang Technological University

The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power conversion process is now predominant. It combines the benefits that are obtainable from both the bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET). The...