High frequency, higher power conversion through PWM switching using the third generation IGBTs

High frequency, higher power conversion through PWM switching using the third generation IGBTs

The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power conversion process is now predominant. It combines the benefits that are obtainable from both the bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET). The...

Full description

Saved in:
Bibliographic Details
Main Author: Neo, Tiong Guan.
Other Authors: Ali Iftekhar Maswood
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Online Access:http://hdl.handle.net/10356/4938
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
id sg-ntu-dr.10356-4938
record_format dspace
spelling sg-ntu-dr.10356-49382023-07-04T15:11:44Z High frequency, higher power conversion through PWM switching using the third generation IGBTs Neo, Tiong Guan. Ali Iftekhar Maswood School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Power electronics The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power conversion process is now predominant. It combines the benefits that are obtainable from both the bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET). The superiority of using IGBT power device in converters is investigated in this project initially. This device's features are studied and modeled using a combination of MOSFET, BJT devices and 5 dependent controlled sources. The behavior and characteristics of the IGBT switches is thus established in the macro model. Master of Engineering 2008-09-17T10:01:51Z 2008-09-17T10:01:51Z 2000 2000 Thesis http://hdl.handle.net/10356/4938 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Power electronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Neo, Tiong Guan.
High frequency, higher power conversion through PWM switching using the third generation IGBTs
description The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power conversion process is now predominant. It combines the benefits that are obtainable from both the bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET). The superiority of using IGBT power device in converters is investigated in this project initially. This device's features are studied and modeled using a combination of MOSFET, BJT devices and 5 dependent controlled sources. The behavior and characteristics of the IGBT switches is thus established in the macro model.
author2 Ali Iftekhar Maswood
author_facet Ali Iftekhar Maswood
Neo, Tiong Guan.
format Theses and Dissertations
author Neo, Tiong Guan.
author_sort Neo, Tiong Guan.
title High frequency, higher power conversion through PWM switching using the third generation IGBTs
title_short High frequency, higher power conversion through PWM switching using the third generation IGBTs
title_full High frequency, higher power conversion through PWM switching using the third generation IGBTs
title_fullStr High frequency, higher power conversion through PWM switching using the third generation IGBTs
title_full_unstemmed High frequency, higher power conversion through PWM switching using the third generation IGBTs
title_sort high frequency, higher power conversion through pwm switching using the third generation igbts
publishDate 2008
url http://hdl.handle.net/10356/4938
_version_ 1772826422551773184

Similar Items