High frequency, high power conversion through PWM switching using the third generation IGBTS
Insulated gate bipolar transistor (IGBT) continues to find wide use in inverter applications due to the combined benefits of both bipolar junction transistor and metal-oxide-semiconductor field-effect transistor. This device is now playing an important role whether in machinery or factory automat...
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| 格式: | Research Report |
| 語言: | English |
| 出版: |
2008
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/14511 |
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| 機構: | Nanyang Technological University |
| 語言: | English |