High frequency, high power conversion through PWM switching using the third generation IGBTS

• المؤلف الرئيسي: Ali Iftekhar Maswood
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Research Report
• اللغة: English
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/14511
• المؤسسة: Nanyang Technological University

Insulated gate bipolar transistor (IGBT) continues to find wide use in inverter applications due to the combined benefits of both bipolar junction transistor and metal-oxide-semiconductor field-effect transistor. This device is now playing an important role whether in machinery or factory automat...