Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors

Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...

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Main Authors: Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ing, Ng Geok, Nitta, Shugo, Kennedy, John, Amano, Hiroshi
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
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Online Access:https://hdl.handle.net/10356/145190
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1451902020-12-15T02:26:11Z Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors Sandupatla, Abhinay Arulkumaran, Subramaniam Ing, Ng Geok Nitta, Shugo Kennedy, John Amano, Hiroshi School of Electrical and Electronic Engineering Temasek Laboratories @ NTU Engineering::Electrical and electronic engineering GaN-on-GaN Schottky Barrier Diodes Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of -2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (-20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at -750 V. Published version 2020-12-15T02:26:10Z 2020-12-15T02:26:10Z 2020 Journal Article Sandupatla, A., Arulkumaran, S., Ing, N. G., Nitta, S., Kennedy, J., & Amano, H. (2020). Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors. Micromachines, 11(5), 519-. doi:10.3390/mi11050519 2072-666X https://hdl.handle.net/10356/145190 10.3390/mi11050519 32443764 5 11 en Micromachines © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
GaN-on-GaN
Schottky Barrier Diodes
spellingShingle Engineering::Electrical and electronic engineering
GaN-on-GaN
Schottky Barrier Diodes
Sandupatla, Abhinay
Arulkumaran, Subramaniam
Ing, Ng Geok
Nitta, Shugo
Kennedy, John
Amano, Hiroshi
Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
description Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of -2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (-20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at -750 V.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Sandupatla, Abhinay
Arulkumaran, Subramaniam
Ing, Ng Geok
Nitta, Shugo
Kennedy, John
Amano, Hiroshi
format Article
author Sandupatla, Abhinay
Arulkumaran, Subramaniam
Ing, Ng Geok
Nitta, Shugo
Kennedy, John
Amano, Hiroshi
author_sort Sandupatla, Abhinay
title Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
title_short Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
title_full Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
title_fullStr Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
title_full_unstemmed Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
title_sort vertical gan-on-gan schottky diodes as α-particle radiation sensors
publishDate 2020
url https://hdl.handle.net/10356/145190
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