Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors

• Main Authors: Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ing, Ng Geok, Nitta, Shugo, Kennedy, John, Amano, Hiroshi
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; GaN-on-GaN; Schottky Barrier Diodes
• Online Access: https://hdl.handle.net/10356/145190
• Institution: Nanyang Technological University

Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated th...