Medium energy carbon and nitrogen ion beam induced modifications in charge transport, structural and optical properties of Ni/Pd/n-GaN schottky barrier diodes

Medium energy carbon and nitrogen ion beam induced modifications in charge transport, structural and optical properties of Ni/Pd/n-GaN schottky barrier diodes

10.3390/ma13061299

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Bibliographic Details
Main Authors: Kumar, S., Zhang, X., Mariswamy, V.K., Reddy, V.R., Kandasami, A., Nimmala, A., Rao, S.V.S.N., Tang, J., Ramakrishna, S., Sannathammegowda, K.
Other Authors: MECHANICAL ENGINEERING
Format: Article
Published: MDPI AG 2021
Subjects:
Charge transport mechanism
Electrical parameters
GaN schottky diodes
LET
MEI irradiation
NIEL
optically active defects
surface morphology
Online Access:https://scholarbank.nus.edu.sg/handle/10635/196193
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/196193

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