Medium energy carbon and nitrogen ion beam induced modifications in charge transport, structural and optical properties of Ni/Pd/n-GaN schottky barrier diodes

• Main Authors: Kumar, S., Zhang, X., Mariswamy, V.K., Reddy, V.R., Kandasami, A., Nimmala, A., Rao, S.V.S.N., Tang, J., Ramakrishna, S., Sannathammegowda, K.
• Other Authors: MECHANICAL ENGINEERING
• Format: Article
• Published: MDPI AG 2021
• Subjects: Charge transport mechanism; Electrical parameters; GaN schottky diodes; LET; MEI irradiation; NIEL; optically active defects; surface morphology
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/196193
• Institution: National University of Singapore

10.3390/ma13061299