Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor

Electrical-stress-invariant gate-oxide traps' capture and emission time constants have been the basis of aging models as well as applications that leverage the stochastic nature of the capture and emission processes, such as the true random number generator. In this work, we show that this pres...

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Main Authors: Ju, Xin, Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2021
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Online Access:https://hdl.handle.net/10356/145754
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1457542021-01-07T02:40:33Z Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor Ju, Xin Ang, Diing Shenp School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Gate Dielectric Defects Random Telegraphic Noise Electrical-stress-invariant gate-oxide traps' capture and emission time constants have been the basis of aging models as well as applications that leverage the stochastic nature of the capture and emission processes, such as the true random number generator. In this work, we show that this presumption is only valid for about two-thirds of the oxide-trap population studied. For the remaining one-third, the traps' capture and/or emission time constants could be changed by the channel hot-carrier (CHC) effect. Such a behavior is found in both polysilicon/silicon oxynitride gated and TiN/HfO2 gated transistors. A reversion of the altered trap time constant to the value before the CHC-stress is also observed, but the period varies significantly for different traps (from several hours to months). Since the CHC stress effect is present in all scaled transistors, the findings would have important implications for models/applications that presume oxide-trap properties to be stress-invariant. Ministry of Education (MOE) Published version This work was supported by the Singapore Ministry of Education Tier 2 Research under Grant MOE2016-T2-2-102. 2021-01-07T02:40:33Z 2021-01-07T02:40:33Z 2020 Journal Article Ju, X., & Ang, D. S. (2020). Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor. IEEE Access, 8, 14048-14053. doi:10.1109/ACCESS.2020.2966577 2169-3536 https://hdl.handle.net/10356/145754 10.1109/ACCESS.2020.2966577 8 14048 14053 en MOE2016-T2-2-102 IEEE Access © 2020 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Gate Dielectric Defects
Random Telegraphic Noise
spellingShingle Engineering::Electrical and electronic engineering
Gate Dielectric Defects
Random Telegraphic Noise
Ju, Xin
Ang, Diing Shenp
Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor
description Electrical-stress-invariant gate-oxide traps' capture and emission time constants have been the basis of aging models as well as applications that leverage the stochastic nature of the capture and emission processes, such as the true random number generator. In this work, we show that this presumption is only valid for about two-thirds of the oxide-trap population studied. For the remaining one-third, the traps' capture and/or emission time constants could be changed by the channel hot-carrier (CHC) effect. Such a behavior is found in both polysilicon/silicon oxynitride gated and TiN/HfO2 gated transistors. A reversion of the altered trap time constant to the value before the CHC-stress is also observed, but the period varies significantly for different traps (from several hours to months). Since the CHC stress effect is present in all scaled transistors, the findings would have important implications for models/applications that presume oxide-trap properties to be stress-invariant.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Ju, Xin
Ang, Diing Shenp
format Article
author Ju, Xin
Ang, Diing Shenp
author_sort Ju, Xin
title Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor
title_short Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor
title_full Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor
title_fullStr Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor
title_full_unstemmed Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor
title_sort alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor
publishDate 2021
url https://hdl.handle.net/10356/145754
_version_ 1688665667117514752