Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor

• المؤلفون الرئيسيون: Ju, Xin, Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering; Gate Dielectric Defects; Random Telegraphic Noise
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/145754

Electrical-stress-invariant gate-oxide traps' capture and emission time constants have been the basis of aging models as well as applications that leverage the stochastic nature of the capture and emission processes, such as the true random number generator. In this work, we show that this pres...