Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth

• Main Authors: Lin, Yiding, Lee, Kwang Hong, Son, Bongkwon, Tan, Chuan Seng
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2021
• 主題: Engineering::Electrical and electronic engineering::Semiconductors; Germanium; Photodetector
• 在線閱讀: https://hdl.handle.net/10356/146080
• 機構: Nanyang Technological University

Germanium (Ge)-based photodetectors have become one of the mainstream components in photonic-integrated circuits (PICs). Many emerging PIC applications require the photodetectors to have high detectivity and low power consumption. Herein, we demonstrate high-detectivity Ge vertical p-i-n photodiodes...