Transition metal qubits in 4H-silicon carbide : a correlated EPR and DFT study of the spin S=1 vanadium V3+ center
Whereas intrinsic defects in silicon carbide (SiC) have been widely considered for qubit applications, transition metals in this material have not yet been recognized as alternative systems. We have investigated the magneto-optical properties of the V3+ center in 4H-SiC by electron paramagnetic reso...
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sg-ntu-dr.10356-1465242023-02-28T19:54:33Z Transition metal qubits in 4H-silicon carbide : a correlated EPR and DFT study of the spin S=1 vanadium V3+ center von Bardeleben, H. J. Zargaleh, Soroush Abbasi Cantin, J. L. Gao, Weibo Biktagirov, T. Gerstmann, U. School of Physical and Mathematical Sciences Science::Physics Defects Quantum Communication Whereas intrinsic defects in silicon carbide (SiC) have been widely considered for qubit applications, transition metals in this material have not yet been recognized as alternative systems. We have investigated the magneto-optical properties of the V3+ center in 4H-SiC by electron paramagnetic resonance (EPR) and photo-EPR spectroscopy in view of their possible application in quantum technology. We show that they fulfill all the requirements for such applications: a high-spin S=1 ground state, optically induced ground-state spin polarization of more than 70%, long spin-lattice relaxation times of the order of a second, as well as associated zero-phonon photoluminescence emission lines in the range of 1.8 μm. Further, the zero-field splitting parameter D is temperature dependent and increases between T=4K and T=292K linearly with a rate of 440 kHz/K, allowing potential nanoscale temperature sensing. These properties make the vanadium acceptor an extremely promising candidate for qubit applications with optical properties in the telecommunication optical range. Agency for Science, Technology and Research (A*STAR) Nanyang Technological University Published version S.A.Z. wishes to acknowledge support from the Quantum Nanophotonic Laboratory at Nanyang Technical University. W.B.G. would like to acknowledge the A*Star QTE program. U.G. and T.B. acknowledge support from the Deutsche Forschungsgemeinschaft (DFG) via priority program SPP 1601 (GE-1260/5-2). 2021-02-23T06:42:04Z 2021-02-23T06:42:04Z 2019 Journal Article von Bardeleben, H. J., Zargaleh, S. A., Cantin, J. L., Gao, W., Biktagirov, T., & Gerstmann, U. (2019). Transition metal qubits in 4H-silicon carbide : a correlated EPR and DFT study of the spin S=1 vanadium V3+ center. Physical Review Materials, 3(12), 124605-. doi:10.1103/physrevmaterials.3.124605 2475-9953 https://hdl.handle.net/10356/146524 10.1103/PhysRevMaterials.3.124605 2-s2.0-85078861901 12 3 en Physical Review Materials © 2019 American Physical Society (APS). All rights reserved. This paper was published in Physical Review Materials and is made available with permission of American Physical Society (APS). application/pdf |
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Science::Physics Defects Quantum Communication |
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Science::Physics Defects Quantum Communication von Bardeleben, H. J. Zargaleh, Soroush Abbasi Cantin, J. L. Gao, Weibo Biktagirov, T. Gerstmann, U. Transition metal qubits in 4H-silicon carbide : a correlated EPR and DFT study of the spin S=1 vanadium V3+ center |
| description |
Whereas intrinsic defects in silicon carbide (SiC) have been widely considered for qubit applications, transition metals in this material have not yet been recognized as alternative systems. We have investigated the magneto-optical properties of the V3+ center in 4H-SiC by electron paramagnetic resonance (EPR) and photo-EPR spectroscopy in view of their possible application in quantum technology. We show that they fulfill all the requirements for such applications: a high-spin S=1 ground state, optically induced ground-state spin polarization of more than 70%, long spin-lattice relaxation times of the order of a second, as well as associated zero-phonon photoluminescence emission lines in the range of 1.8 μm. Further, the zero-field splitting parameter D is temperature dependent and increases between T=4K and T=292K linearly with a rate of 440 kHz/K, allowing potential nanoscale temperature sensing. These properties make the vanadium acceptor an extremely promising candidate for qubit applications with optical properties in the telecommunication optical range. |
| author2 |
School of Physical and Mathematical Sciences |
| author_facet |
School of Physical and Mathematical Sciences von Bardeleben, H. J. Zargaleh, Soroush Abbasi Cantin, J. L. Gao, Weibo Biktagirov, T. Gerstmann, U. |
| format |
Article |
| author |
von Bardeleben, H. J. Zargaleh, Soroush Abbasi Cantin, J. L. Gao, Weibo Biktagirov, T. Gerstmann, U. |
| author_sort |
von Bardeleben, H. J. |
| title |
Transition metal qubits in 4H-silicon carbide : a correlated EPR and DFT study of the spin S=1 vanadium V3+ center |
| title_short |
Transition metal qubits in 4H-silicon carbide : a correlated EPR and DFT study of the spin S=1 vanadium V3+ center |
| title_full |
Transition metal qubits in 4H-silicon carbide : a correlated EPR and DFT study of the spin S=1 vanadium V3+ center |
| title_fullStr |
Transition metal qubits in 4H-silicon carbide : a correlated EPR and DFT study of the spin S=1 vanadium V3+ center |
| title_full_unstemmed |
Transition metal qubits in 4H-silicon carbide : a correlated EPR and DFT study of the spin S=1 vanadium V3+ center |
| title_sort |
transition metal qubits in 4h-silicon carbide : a correlated epr and dft study of the spin s=1 vanadium v3+ center |
| publishDate |
2021 |
| url |
https://hdl.handle.net/10356/146524 |
| _version_ |
1759853099881594880 |