Transition metal qubits in 4H-silicon carbide : a correlated EPR and DFT study of the spin S=1 vanadium V3+ center

• Main Authors: von Bardeleben, H. J., Zargaleh, Soroush Abbasi, Cantin, J. L., Gao, Weibo, Biktagirov, T., Gerstmann, U.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2021
• Subjects: Science::Physics; Defects; Quantum Communication
• Online Access: https://hdl.handle.net/10356/146524
• Institution: Nanyang Technological University

Whereas intrinsic defects in silicon carbide (SiC) have been widely considered for qubit applications, transition metals in this material have not yet been recognized as alternative systems. We have investigated the magneto-optical properties of the V3+ center in 4H-SiC by electron paramagnetic reso...