Van der Waals engineering of ferroelectric heterostructures for long-retention memory

• المؤلفون الرئيسيون: Wang, Xiaowei, Zhu, Chao, Deng, Ya, Duan, Ruihuan, Chen, Jieqiong, Zeng, Qingsheng, Zhou, Jiadong, Fu, Qundong, You, Lu, Liu, Song, Edgar, James H., Yu, Peng, Liu, Zheng
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Materials; Electronic Devices; Information Storage
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/146740
• المؤسسة: Nanyang Technological University

The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory potential using the commercially available ferroelectrics. Here, we show a long-retention ferroelectric transistor memory cell featuring a metal-ferroelectric-metal-...