Sub-mA/cm² dark current density, buffer-less Germanium (Ge) photodiodes on a 200-mm Ge-on-insulator substrate

• Main Authors: Lin, Yiding, Son, Bongkwon, Lee, Kwang Hong, Michel, Jurgen, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; Germanium (Ge); Ge-on-insulator
• Online Access: https://hdl.handle.net/10356/146751
• Institution: Nanyang Technological University

In recent years, Germanium (Ge) photodiodes have established a widespread utilization in photonic-integrated circuits (PICs). However, the devices commonly exhibit a prominent dark current due to the substantial defects at the Ge/Si heteroepitaxial interface. Herein, we demonstrate normal-incidence,...