Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm

• المؤلفون الرئيسيون: Wu, Shaoteng, Son, Bongkwon, Zhang, Lin, Chen, Qimiao, Zhou, Hao, Goh, Simon Chun Kiat, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Germanium-Tin; Photodetector
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/147836

Here, we explore the thermal stability of GeSn epilayers with varying Sn contents (3-10%) at an annealing temperature ranging from 300 to 750°C. It is found that ordered nanopatterns are formed on the surface of GeSn with Sn content of 8% without excessive Sn precipitation after thermal annealing at...