Hot carrier degradation of extended drain N-channel metal-oxide-semiconductor

• Main Author: Kok, Ignatius Jin Yan
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2021
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/149059
• Institution: Nanyang Technological University

The objective of the project targets the understanding of how the Extended Drain Metal Oxide Semiconductor (EDMOS) operates under a variety of stressing conditions. The EDMOS is seen as a potential successor to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETS) used in power amplifiers, pa...