Hot carrier degradation of extended drain N-channel metal-oxide-semiconductor

The objective of the project targets the understanding of how the Extended Drain Metal Oxide Semiconductor (EDMOS) operates under a variety of stressing conditions. The EDMOS is seen as a potential successor to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETS) used in power amplifiers, pa...

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Bibliographic Details
Main Author: Kok, Ignatius Jin Yan
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2021
Subjects:
Online Access:https://hdl.handle.net/10356/149059
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Institution: Nanyang Technological University
Language: English

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