Effect of oxide field on hot carrier induced degradation in CMOS gate oxide

Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Zhao, S.P., Taylor, S.
Other Authors: INSTITUTE OF MICROELECTRONICS
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/112976
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Institution: National University of Singapore