Effect of oxide field on hot carrier induced degradation in CMOS gate oxide
Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
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Main Authors: | Zhao, S.P., Taylor, S. |
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Other Authors: | INSTITUTE OF MICROELECTRONICS |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/112976 |
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Institution: | National University of Singapore |
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