Measurement and simulation of hot carrier degradation in PMOSFET by gate capacitance

Measurement and simulation of hot carrier degradation in PMOSFET by gate capacitance

10.1109/16.381990

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Bibliographic Details
Main Authors: Ling, C.H., Seah, B.P., Samudra, Ganesh S., Gan, Chock H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80705
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/80705

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