Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon

• Main Authors: Dror, Ben, Zheng, Yuanjin, Agrawal, M., Radhakrishnan, K., Orenstein, Meir, Bahir, Gad
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering; Quantum Well Devices; Photonic Integrated Circuits
• Online Access: https://hdl.handle.net/10356/150803
• Institution: Nanyang Technological University

We demonstrate the first implementation of a GaN-based infrared photodetector epitaxially grown on silicon. The device is a GaN/AlGaN quantum cascade detector that consists of layered quantum well structure grown by plasma-assisted molecular beam epitaxy on a 4-in Si (111) substrate. The design, simulations, growth process, optical measurements and device performance are presented and discussed. The photosignal, centered at a wavelength of 4.4 μm, is resolved up to 150 K. The zero bias responsivity is 44 μA/W at 19 K and the detectivity is 2 × 10 8 Jones.