Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule

• Main Authors: Hou, Kunqi, Chen, Shuai, Zhou, Cheng, Nguyen, Linh Lan, Dananjaya, Putu Andhita, Duchamp, Martial, Bazan, Guillermo C., Lew, Wen Siang, Leong, Wei Lin
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering::Nanoelectronics; Engineering::Materials::Functional materials; ReRAM; π-Conjugated Molecule
• Online Access: https://hdl.handle.net/10356/153464
• Institution: Nanyang Technological University

Conductive filaments (CFs) play a critical role in the mechanism of resistive random-access memory (ReRAM) devices. However, in situ detection and visualization of the precise location of CFs are still key challenges. We demonstrate for the first time the use of a π-conjugated molecule which can transform between its twisted and planar states upon localized Joule heating generated within filament regions, thus reflecting the locations of the underlying CFs. Customized patterns of CFs were induced and observed by the π-conjugated molecule layer, which confirmed the hypothesis. Additionally, statistical studies on filaments distribution were conducted to study the effect of device sizes and bottom electrode heights, which serves to enhance the understanding of switching behavior and their variability at device level. Therefore, this approach has great potential in aiding the development of ReRAM technology.