Operando direct observation of filament formation in resistive switching devices enabled by a topological transformation molecule

• Main Authors: Hou, Kunqi, Chen, Shuai, Zhou, Cheng, Nguyen, Linh Lan, Dananjaya, Putu Andhita, Duchamp, Martial, Bazan, Guillermo C., Lew, Wen Siang, Leong, Wei Lin
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering::Nanoelectronics; Engineering::Materials::Functional materials; ReRAM; π-Conjugated Molecule
• Online Access: https://hdl.handle.net/10356/153464
• Institution: Nanyang Technological University

Conductive filaments (CFs) play a critical role in the mechanism of resistive random-access memory (ReRAM) devices. However, in situ detection and visualization of the precise location of CFs are still key challenges. We demonstrate for the first time the use of a π-conjugated molecule which can tra...