Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

• المؤلفون الرئيسيون: Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Ranjan, A., Seah, Alex Tian Long, Huo, Lili
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering; Aluminum Gallium Nitride; Electron Mobility
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/153569

Unintentionally doped (UID) AlGaN/GaN-based multichannel high electron mobility transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using plasma-assisted molecular beam epitaxy. The MC-HEMT heterostructure with a GaN channel thickness of 100 nm resulted in a cumulative...