Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

Unintentionally doped (UID) AlGaN/GaN-based multichannel high electron mobility transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using plasma-assisted molecular beam epitaxy. The MC-HEMT heterostructure with a GaN channel thickness of 100 nm resulted in a cumulative...

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書目詳細資料
Main Authors:	Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Ranjan, A., Seah, Alex Tian Long, Huo, Lili
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2021
主題:	Engineering::Electrical and electronic engineering Aluminum Gallium Nitride Electron Mobility
在線閱讀:	https://hdl.handle.net/10356/153569
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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