Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications

• المؤلفون الرئيسيون: Tai, Yeh-Chen, Yeh, Po-Lun, An, Shu, Cheng, Hung-Hsiang, Kim, Munho, Chang, Guo-En
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; GeSn Alloys; Silicon Photonics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/153651
• المؤسسة: Nanyang Technological University

GeSn alloys have emerged as promising materials for silicon-based optoelectronic devices. However, the epitaxy of pseudomorphic GeSn layers on a Ge buffer is susceptible to a significant compressive strain that significantly hinders the performance of GeSn-based photonic devices. Herein, we report o...