Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications

GeSn alloys have emerged as promising materials for silicon-based optoelectronic devices. However, the epitaxy of pseudomorphic GeSn layers on a Ge buffer is susceptible to a significant compressive strain that significantly hinders the performance of GeSn-based photonic devices. Herein, we report o...

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Bibliographic Details
Main Authors: Tai, Yeh-Chen, Yeh, Po-Lun, An, Shu, Cheng, Hung-Hsiang, Kim, Munho, Chang, Guo-En
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2021
Subjects:
Online Access:https://hdl.handle.net/10356/153651
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Institution: Nanyang Technological University
Language: English
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