Performance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layer

• المؤلفون الرئيسيون: Li, Yuanbo, Sun, Jianxun, Salim, Teddy, Liu, Rongyue, Chen, Tupei
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering; Engineering::Materials; Aluminum Compounds; Carrier Concentration
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/154057

We report a high-mobility transparent Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor (TFT) with sputtered AlOx passivation layer. The interfacial region between the IGZO layer and the AlOx layer played a crucial role in improving the field-effect mobility (the maximum field-effect mobility in...