Dark current analysis of InasSb-based hetero-p-i-n mid-infrared photodiode

• المؤلفون الرئيسيون: Suo, Fei, Tong, Jinchao, Zhang, Dao Hua
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering; Dark Current; Heterostructure
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/154455
• المؤسسة: Nanyang Technological University

We comprehensively study the characteristics of dark current for a p-i-n heterostructure photodiode. To reduce the dark current, a wide-bandgap layer (AlGaSb) and thin quaternary layers (AlInAsSb) are inserted in the heterostructure for blocking the dark carrier diffusion and limiting type-II transi...