Visible light detection and memory capabilities in MgO/HfO bilayer-based transparent structure for photograph sensing

• Main Authors: Kumar, Dayanand, Kalaga, Pranav Sairam, Ang, Diing Shenp
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering; Conductive Filament; Electrical SET
• Online Access: https://hdl.handle.net/10356/154465
• Institution: Nanyang Technological University

Photograph response in transparent devices has been a hot area of investigation, with several material systems being used to generate a response to illumination. In this study, we propose an ITO/MgO/HfO2/ITO bilayer (BL) transparent resistive switching (RS) device that exhibits a photograph response through defect engineering in the switching layer, which resulted in a subsurface active RS location in the formed conductive filament, thus reducing the loss of oxygen through the polycrystalline electrode. We observe that the switching performance is enhanced in the ITO/MgO/HfO2/ITO BL device as compared to the ITO/HfO2/ITO single-layer device with the insertion of MgO layer between the ITO top electrode and HfO2 RS layer. The device shows excellent ON/ OFF ratio (107), high and stable dc electrical set and optical reset endurance (>1000 cycles without degradation), excellent retention (>104 s at 85 °C), high transparency (>85% transmittance in the visible spectrum), and a response time of 30 $\mu \text{s}$ for the optical reset. This study lays the foundation for future work involving oxide defect-based optical functionalization in RS devices with the possibility for being used in photograph sensing.