A 600-mA, fast-transient low-dropout regulator with pseudo-ESR technique in 0.18-μm CMOS process

A 600-mA, fast-transient low-dropout regulator with pseudo-ESR technique in 0.18-μm CMOS process

In this article, a dual loop-compensated, fast-transient, low-dropout regulator (LDO) is proposed for battery-powered applications. It is successfully implemented in a 0.18- μm CMOS process with a total silicon area of 210 μm × 593 μm. The proposed LDO is composed of two feedback loops. The fast fee...

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Bibliographic Details
Main Authors: Li, K., Xiao, X., Jin, X., Zheng, Yuanjin
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering
Dual Loop Compensation (DLC)
Loop Dtability
Online Access:https://hdl.handle.net/10356/154483
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/154483

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