A 600-mA, fast-transient low-dropout regulator with pseudo-ESR technique in 0.18-μm CMOS process
In this article, a dual loop-compensated, fast-transient, low-dropout regulator (LDO) is proposed for battery-powered applications. It is successfully implemented in a 0.18- μm CMOS process with a total silicon area of 210 μm × 593 μm. The proposed LDO is composed of two feedback loops. The fast fee...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/154483 |
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| Institution: | Nanyang Technological University |
| Language: | English |