A 600-mA, fast-transient low-dropout regulator with pseudo-ESR technique in 0.18-μm CMOS process

• المؤلفون الرئيسيون: Li, K., Xiao, X., Jin, X., Zheng, Yuanjin
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering; Dual Loop Compensation (DLC); Loop Dtability
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/154483

In this article, a dual loop-compensated, fast-transient, low-dropout regulator (LDO) is proposed for battery-powered applications. It is successfully implemented in a 0.18- μm CMOS process with a total silicon area of 210 μm × 593 μm. The proposed LDO is composed of two feedback loops. The fast fee...