High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM)

• Main Authors: Zeng, Xiaomei, Liu, Qing, Tay, Jing Yun, Chew, Kai Yang, Cheah, Jun Wei, Gan, Chee Lip
• 其他作者: School of Materials Science and Engineering
• 格式: Article
• 語言: English
• 出版: 2022
• 主題: Engineering::Materials::Testing of materials; Floating Gate of EEPROM; Front-Side Sample Preparation; Scanning Nonlinear Dielectric Microscopy; Data Retrieval
• 在線閱讀: https://hdl.handle.net/10356/156017

By exposing floating gates of EEPROM memory cells with frontside sample preparation, scanning nonlinear dielectric microscopy (SNDM) succeeded in reading back the data stored in the memory cells with a 250 nm node size. At an optimized voltage bias of AC = 3 V and DC = 1 V, a clear signal contrast b...