High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM)

• المؤلفون الرئيسيون: Zeng, Xiaomei, Liu, Qing, Tay, Jing Yun, Chew, Kai Yang, Cheah, Jun Wei, Gan, Chee Lip
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Materials::Testing of materials; Floating Gate of EEPROM; Front-Side Sample Preparation; Scanning Nonlinear Dielectric Microscopy; Data Retrieval
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/156017
• المؤسسة: Nanyang Technological University

By exposing floating gates of EEPROM memory cells with frontside sample preparation, scanning nonlinear dielectric microscopy (SNDM) succeeded in reading back the data stored in the memory cells with a 250 nm node size. At an optimized voltage bias of AC = 3 V and DC = 1 V, a clear signal contrast b...