High-sensitivity and mechanically compliant flexible Ge photodetectors with a vertical p-i-n configuration

We have demonstrated high-performance flexible germanium (Ge) vertical p-i-n photodetectors (PDs) based on a resonant cavity structure by a direct flip transfer of Ge nanomembranes on polyethylene terephthalate (PET) substrates. Finite-difference time-domain simulation proves that the vertical cavit...

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Bibliographic Details
Main Authors: An, Shu, Wu, Shaoteng, Lee, Kwang-Hong, Tan, Chuan Seng, Tai, Yeh-Chen, Chang, Guo-En, Kim, Munho
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2022
Subjects:
Online Access:https://hdl.handle.net/10356/156879
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Institution: Nanyang Technological University
Language: English