Studies of gallium nitride high electron mobility transistors (HEMTs)

• 主要作者: Tie, Keven Guo Sheng
• 其他作者: Ng Geok Ing
• 格式: Final Year Project
• 語言: English
• 出版: Nanyang Technological University 2022
• 主題: Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/157799
• 機構: Nanyang Technological University

Gallium Nitride (GaN) is a Group III/V wide bandgap nitride-based material that offer many unique properties. It not only offers higher breakdown strength, faster switching speed and lower on resistance, it significantly outperforms the traditional silicon-based device. These properties have been...