Electrical stress and failure analysis of power semiconductor devices
Power electronics' importance is expanding in both industry and society. It has the potential to dramatically increase the efficiency of electricity generation systems. They are crucial components of contemporary power electronics, not only for ordinary use, but also for severe environmen...
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| 主要作者: | |
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| 其他作者: | |
| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
Nanyang Technological University
2022
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/158174 |
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| 總結: | Power electronics' importance is expanding in both industry and society. It has the potential to
dramatically increase the efficiency of electricity generation systems. They are crucial
components of contemporary power electronics, not only for ordinary use, but also for severe
environments. The current architecture of power electronics equipment demands substantial
redundancy for reliability. Thus, to optimize power density, it is required to first analyze the
dependability of power semiconductors to determine a power device's actual operational
margin. It is necessary to understand the fundamental principles of semiconductor power
devices to fully fulfil this potential.
In summary, this report will investigate the I-V characteristic after power cycling test and a
Double Pulse Test. FETs made of gallium nitride (GaN) and MOSFET/IGBTs made of silicon
(Si) are used. There will be laboratory simulations and experiments. The goal of this study is
to analyse the features of degraded power semiconductors, as well as their switching behaviour |
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