Stretchable HfO₂-based resistive switching memory using the wavy structured design

• Main Authors: Wang, Ming, Guo, Kexin, Cheng, Hongfei
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Aeronautical engineering; Wavy Structure; Flexible Electronics
• Online Access: https://hdl.handle.net/10356/159684
• Institution: Nanyang Technological University

In this letter, we report a stretchable HfO2-based resistive switching memory device utilizing the wavy structured strategy. The fabricated Cu/HfO2/Au device shows reliable and reversible resistive switching behaviors up to a stretching strain of 20%. After being released, the reproducible memory characteristics of the device can still be maintained. The statistical resistive switching parameters under various stretching strains in the range from 0% to 20% are counted, which exhibit a large OFF/ON resistance ratio (103), low operation voltage (2 V), good endurance and retention (104s), demonstrating the good and reliable stretchable memory characteristics. Moreover, the device-to-device distributions are carried out in these stretched states, further validating the device robustness on stretching strains. Our results show a promising approach to achieve the stretchable memory by rendering inorganic-based resistive switching devices with the wavy structure, which extends rigid and brittle memory towards future highly flexible, even stretchable data storage and computing.