Stretchable HfO₂-based resistive switching memory using the wavy structured design
In this letter, we report a stretchable HfO2-based resistive switching memory device utilizing the wavy structured strategy. The fabricated Cu/HfO2/Au device shows reliable and reversible resistive switching behaviors up to a stretching strain of 20%. After being released, the reproducible memory ch...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/159684 |
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| Institution: | Nanyang Technological University |
| Language: | English |