Ferroelectric HfO2-based materials for next-generation ferroelectric memories

10.1142/S2010135X16300036

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Bibliographic Details
Main Authors: Fan, Z, Chen, J, Wang, J
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Review
Published: World Scientific Publishing Co. Pte Ltd 2020
Online Access:https://scholarbank.nus.edu.sg/handle/10635/174958
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Institution: National University of Singapore