Ferroelectric HfO2-based materials for next-generation ferroelectric memories

10.1142/S2010135X16300036

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Bibliographic Details
Main Authors:	Fan, Z, Chen, J, Wang, J
Other Authors:	MATERIALS SCIENCE AND ENGINEERING
Format:	Review
Published:	World Scientific Publishing Co. Pte Ltd 2020
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/174958
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Institution:	National University of Singapore

Description
Summary:	10.1142/S2010135X16300036

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