Ferroelectric HfO2-based materials for next-generation ferroelectric memories
10.1142/S2010135X16300036
Saved in:
Main Authors: | Fan, Z, Chen, J, Wang, J |
---|---|
Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Review |
Published: |
World Scientific Publishing Co. Pte Ltd
2020
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/174958 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
STRUCTURAL ANALYSIS OF FERROELECTRICITY IN HfO2-ZrO2 SOLID SOLUTION
by: MARLINA (NIM : 20214010), RESTI -
Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2
by: Yeo, C.C., et al.
Published: (2014) -
Transport properties of HfO2−x based resistive-switching memories
by: Wang, Zhongrui, et al.
Published: (2013) -
MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2
by: Park, C.S., et al.
Published: (2014) -
Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films
by: Fan, Zhen, et al.
Published: (2016)