Ferroelectric HfO2-based materials for next-generation ferroelectric memories
10.1142/S2010135X16300036
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World Scientific Publishing Co. Pte Ltd
2020
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sg-nus-scholar.10635-1749582024-04-17T02:44:25Z Ferroelectric HfO2-based materials for next-generation ferroelectric memories Fan, Z Chen, J Wang, J MATERIALS SCIENCE AND ENGINEERING 10.1142/S2010135X16300036 Journal of Advanced Dielectrics 6 2 1630003 2020-09-09T01:33:09Z 2020-09-09T01:33:09Z 2016 Review Fan, Z, Chen, J, Wang, J (2016). Ferroelectric HfO2-based materials for next-generation ferroelectric memories. Journal of Advanced Dielectrics 6 (2) : 1630003. ScholarBank@NUS Repository. https://doi.org/10.1142/S2010135X16300036 2010135X https://scholarbank.nus.edu.sg/handle/10635/174958 World Scientific Publishing Co. Pte Ltd Unpaywall 20200831 |
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10.1142/S2010135X16300036 |
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MATERIALS SCIENCE AND ENGINEERING |
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MATERIALS SCIENCE AND ENGINEERING Fan, Z Chen, J Wang, J |
format |
Review |
author |
Fan, Z Chen, J Wang, J |
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Fan, Z Chen, J Wang, J Ferroelectric HfO2-based materials for next-generation ferroelectric memories |
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Fan, Z |
title |
Ferroelectric HfO2-based materials for next-generation ferroelectric memories |
title_short |
Ferroelectric HfO2-based materials for next-generation ferroelectric memories |
title_full |
Ferroelectric HfO2-based materials for next-generation ferroelectric memories |
title_fullStr |
Ferroelectric HfO2-based materials for next-generation ferroelectric memories |
title_full_unstemmed |
Ferroelectric HfO2-based materials for next-generation ferroelectric memories |
title_sort |
ferroelectric hfo2-based materials for next-generation ferroelectric memories |
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World Scientific Publishing Co. Pte Ltd |
publishDate |
2020 |
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https://scholarbank.nus.edu.sg/handle/10635/174958 |
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