Stretchable HfO₂-based resistive switching memory using the wavy structured design

Stretchable HfO₂-based resistive switching memory using the wavy structured design

In this letter, we report a stretchable HfO2-based resistive switching memory device utilizing the wavy structured strategy. The fabricated Cu/HfO2/Au device shows reliable and reversible resistive switching behaviors up to a stretching strain of 20%. After being released, the reproducible memory ch...

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Bibliographic Details
Main Authors: Wang, Ming, Guo, Kexin, Cheng, Hongfei
Other Authors: School of Materials Science and Engineering
Format: Article
Language:English
Published: 2022
Subjects:
Engineering::Aeronautical engineering
Wavy Structure
Flexible Electronics
Online Access:https://hdl.handle.net/10356/159684
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/159684

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