Functionalization of transparent oxide resistive random-access memories for visible light photosensitivity
Resistive Random-Access Memory (RRAM) by virtue of its simple metal-insulator-metal structure, high scalability, excellent device density and the potential to become a future universal memory format of an industry fast approaching a limit to Moore’s law scaling has seen tremendous research over the...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2022
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| Online Access: | https://hdl.handle.net/10356/160030 |
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| Institution: | Nanyang Technological University |
| Language: | English |