Functionalization of transparent oxide resistive random-access memories for visible light photosensitivity

• Main Author: Kalaga, Pranav Sairam
• Other Authors: Ang Diing Shenp
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2022
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics; Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/160030
• Institution: Nanyang Technological University

Resistive Random-Access Memory (RRAM) by virtue of its simple metal-insulator-metal structure, high scalability, excellent device density and the potential to become a future universal memory format of an industry fast approaching a limit to Moore’s law scaling has seen tremendous research over the...